Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC
Abstract
In the present paper the quantitative relationship between the heat and mass transfer in the Aixtron VP508 hot wallCVD reactor and the epitaxial growth of silicon carbide is determined. The aim of this study was to estimate optimalprocess conditions for obtaining monocrystalline silicon carbide epi-layers with the most homogenous thickness. Sincethere are many parameters influencing reactions on the crystal area, such as temperature, pressure, gas flow and reactorgeometry, it is dicult to design an optimal process. Detailed 3D modeling was used to gain insight into the processconditions, as it is problematic to experimentally determine the exact distribution of heat and mass transfer inside thereactor during epitaxial growth. Numerical simulations allow one to understand the process by calculating the heat andmass transfer distribution during the epitaxial growth of silicon carbide. The present approach was applied to enhancethe performance of the Aixtron VP508 reactor.References
[1] Park, Yoon Soo. SiC materials and devices, Semiconductors and Semimetals, Vol. 52, San Diego: Academic press
[2] S.K. Lilov, Yu.M. Tairov, V.F. Tsvetkov, Study of silicon carbide epitaxial growth kinetics in the SiC-C system, Journal of Crystal Growth, Volume 46, Issue 2, February (1979), Pages 269-273
[3] D. Teklinska, K. Kosciewicz, K. Grodecki, M. Tokarczyk, G. Kowalski , W. Strupinski, A. Olszyna, J. Baranowski, Epitaxial graphene perfection vs. SiC substrate quality, Central European Journal of Physics, April 2011, Volume 9, Issue 2, pp 446-453
[4] Wang, Y.A. Davis R.F. Growth rate and surface microstructure in 6H-SiC thin films grown by chemical vapour deposition, J. Electron. Mater. 20:869
[5] Xianfeng, Zhiming Chen, Jianping Ma, Xiang Zan, Hongbin Pu, Gang Lu, Epitaxial growth of cubic silicon carbide on silicon by sublimation method, Optical Materials, Volume 23, (2003), Pages 39-42
[6] P.M. Lofgrem, C. Hallin, C.-Y. Gu, W. Ji, 3-d thermal and flow modeling of hot wall epitaxial chemical vapor deposition reactors, heated by induction, Materials Science Forum, Volumes 338-342 (2000) 153-156
[7] P.M. Lofgren, W. Ji, C.-Y. Gu, Modeling of silicon carbide epitaxial growth in hot-wall Chemical Vapor Deposition Process, Journal of The Electrochemical Society 147 (1) 164-175 (2000)
[8] R.P. Pawlowski, C. Theodoropoulos, A.G. Salinger, T.J. Mountziaris, H.K. Moffat, J.N. Shadid, E.J. Thrush, Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design, Journal of Crystal Growth 221 (2000) 622-628
[9] M. Dauelsberg, H. Hardtdegen, L. Kadinski, A. Kaluza, P. Kaufmann, Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gasses N2 and H2, Journal of Crystal Growth 223 (2001) 21-28
[10] H. Hardtdegen, A. Kaluza, D. Gauer, M.v.d. Ahe, M. Grimm, P. Kaufmann, L. Kadinski, On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor, Journal of Crystal Growth 223 (2001) 15-20
[11] C. S. Kim, J. Hong, J. Shim, B. J. Kim, H-H. Kim, S.D. Yoo, W. S. Lee, Numerical and Experimental Study on Metal Organic Vapor-Phase Epitaxy of InGaN/GaN Multi-Quantum-Wells, Journal of Fluids Engineering, Vol. 130, 081601, 2008
[12] M.Dauelsberg, L.Kandinski, Yu.N.Makarov, E.Woelk, G.Strauch, D.Schmitz, H.Juergensen, GaN-MOVPE: correlation between computer modelling and experimental data, Institute of Physics Conference Series Vol.142, 887 (1996)
[13] D. Teklinska, K. Grodecki, I. Jozwik-Biała, P. Caban, A. Olszyna, W. Strupinski, The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates, Journal of Crystal Growth – article in press
[14] Guobing Zhou, Shi-Chune Yao, “Effect of surface roughness on laminar liquid flow in micro-channels”, Applied Thermal Engineering, Volume 31, Issues 2-3 (2011) 228-234
[15] E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov, B.S. Yavich, W.N. Wang, Deposit behavior of GaN in AIX 200/4 RF-S horizontal reactor, Journal of Crystal Growth 261 (2004) 182-189
[2] S.K. Lilov, Yu.M. Tairov, V.F. Tsvetkov, Study of silicon carbide epitaxial growth kinetics in the SiC-C system, Journal of Crystal Growth, Volume 46, Issue 2, February (1979), Pages 269-273
[3] D. Teklinska, K. Kosciewicz, K. Grodecki, M. Tokarczyk, G. Kowalski , W. Strupinski, A. Olszyna, J. Baranowski, Epitaxial graphene perfection vs. SiC substrate quality, Central European Journal of Physics, April 2011, Volume 9, Issue 2, pp 446-453
[4] Wang, Y.A. Davis R.F. Growth rate and surface microstructure in 6H-SiC thin films grown by chemical vapour deposition, J. Electron. Mater. 20:869
[5] Xianfeng, Zhiming Chen, Jianping Ma, Xiang Zan, Hongbin Pu, Gang Lu, Epitaxial growth of cubic silicon carbide on silicon by sublimation method, Optical Materials, Volume 23, (2003), Pages 39-42
[6] P.M. Lofgrem, C. Hallin, C.-Y. Gu, W. Ji, 3-d thermal and flow modeling of hot wall epitaxial chemical vapor deposition reactors, heated by induction, Materials Science Forum, Volumes 338-342 (2000) 153-156
[7] P.M. Lofgren, W. Ji, C.-Y. Gu, Modeling of silicon carbide epitaxial growth in hot-wall Chemical Vapor Deposition Process, Journal of The Electrochemical Society 147 (1) 164-175 (2000)
[8] R.P. Pawlowski, C. Theodoropoulos, A.G. Salinger, T.J. Mountziaris, H.K. Moffat, J.N. Shadid, E.J. Thrush, Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design, Journal of Crystal Growth 221 (2000) 622-628
[9] M. Dauelsberg, H. Hardtdegen, L. Kadinski, A. Kaluza, P. Kaufmann, Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gasses N2 and H2, Journal of Crystal Growth 223 (2001) 21-28
[10] H. Hardtdegen, A. Kaluza, D. Gauer, M.v.d. Ahe, M. Grimm, P. Kaufmann, L. Kadinski, On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor, Journal of Crystal Growth 223 (2001) 15-20
[11] C. S. Kim, J. Hong, J. Shim, B. J. Kim, H-H. Kim, S.D. Yoo, W. S. Lee, Numerical and Experimental Study on Metal Organic Vapor-Phase Epitaxy of InGaN/GaN Multi-Quantum-Wells, Journal of Fluids Engineering, Vol. 130, 081601, 2008
[12] M.Dauelsberg, L.Kandinski, Yu.N.Makarov, E.Woelk, G.Strauch, D.Schmitz, H.Juergensen, GaN-MOVPE: correlation between computer modelling and experimental data, Institute of Physics Conference Series Vol.142, 887 (1996)
[13] D. Teklinska, K. Grodecki, I. Jozwik-Biała, P. Caban, A. Olszyna, W. Strupinski, The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates, Journal of Crystal Growth – article in press
[14] Guobing Zhou, Shi-Chune Yao, “Effect of surface roughness on laminar liquid flow in micro-channels”, Applied Thermal Engineering, Volume 31, Issues 2-3 (2011) 228-234
[15] E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov, B.S. Yavich, W.N. Wang, Deposit behavior of GaN in AIX 200/4 RF-S horizontal reactor, Journal of Crystal Growth 261 (2004) 182-189
Published
2015-07-21
How to Cite
SKIBINSKI, Jakub et al.
Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC.
Journal of Power Technologies, [S.l.], v. 95, n. 2, p. 119--125, july 2015.
ISSN 2083-4195.
Available at: <https://papers.itc.pw.edu.pl/index.php/JPT/article/view/604>. Date accessed: 16 apr. 2024.
Issue
Section
Materials Science
Keywords
Finite Volume Method, epitaxial growth, chemical vapor deposition, silicon carbide, semiconductors
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