Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC

  • Jakub Skibinski Faculty of Materials Science and Engineering Warsaw University of Technology
  • Tomasz Wejrzanowski Faculty of Materials Science and Engineering Warsaw University of Technology
  • Dominika Teklinska Institute of Electronic Materials Technology
  • Krzysztof J Kurzydlowski Faculty of Materials Science and Engineering Warsaw University of Technology


In the present paper the quantitative relationship between the heat and mass transfer in the Aixtron VP508 hot wallCVD reactor and the epitaxial growth of silicon carbide is determined. The aim of this study was to estimate optimalprocess conditions for obtaining monocrystalline silicon carbide epi-layers with the most homogenous thickness. Sincethere are many parameters influencing reactions on the crystal area, such as temperature, pressure, gas flow and reactorgeometry, it is dicult to design an optimal process. Detailed 3D modeling was used to gain insight into the processconditions, as it is problematic to experimentally determine the exact distribution of heat and mass transfer inside thereactor during epitaxial growth. Numerical simulations allow one to understand the process by calculating the heat andmass transfer distribution during the epitaxial growth of silicon carbide. The present approach was applied to enhancethe performance of the Aixtron VP508 reactor.


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How to Cite
SKIBINSKI, Jakub et al. Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC. Journal of Power Technologies, [S.l.], v. 95, n. 2, p. 119--125, july 2015. ISSN 2083-4195. Available at: <>. Date accessed: 14 july 2024.
Materials Science


Finite Volume Method, epitaxial growth, chemical vapor deposition, silicon carbide, semiconductors

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