Use of computer modeling for defect engineering in Czochralski silicon growth

Vladimir Artemyev, Andrey Smirnov, Vladimir Kalaev, Vasif Mamedov, Tomasz Wejrzanowski, Mateusz Grybczuk, Peter Dold, Roland Kunert

Abstract


The yield and quality of silicon wafers are mostly determined by defects, including grain boundaries, dislocations, vacancies,
interstitials, and vacancy and oxygen clusters. Active generation and multiplication of dislocations during Czochralski monosilicon
crystal growth is almost always followed by a transition to multicrystalline material and is called structure loss. Possible
factors in structure loss are related to high thermal stresses, fluctuations of local crystallization rate caused by melt flow
turbulence, melt undercooling and incorporation of solid particles from the melt into the crystal. Experimental analysis of
dislocation density distributions in grown crystals contributes to an understanding of the key reasons for structure loss: particle
incorporation at the crystallization front and strong fluctuations of crystallization rate with temporal remelting. Comparison of
experimental dislocation density measurements and modeling results calculated using the Alexander-Haasen model showed
good agreement for silicon samples. The Alexander-Haasen model provides reasonably accurate results for dislocation
density accompanying structure loss phenomena and can be used to predict dislocation density and residual stresses in
multicrystalline Czochralski silicon ingots, which are grown for the purpose of manufacturing polysilicon rods for Siemens
reactors and silicon construction elements.


Keywords


Czochralski silicon growth; Structure loss; Dislocation density

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