Numerical simulations of epitaxial growth in MOVPE reactor as a tool for aluminum nitride growth optimization

  • Jakub Skibinski Faculty of Materials Science and Engineering Warsaw University of Technology
  • Piotr Caban Institute of Electronic Materials Technology
  • Tomasz Wejrzanowski Faculty of Materials Science and Engineering Warsaw University of Technology
  • Mateusz Grybczuk Faculty of Materials Science and Engineering Warsaw University of Technology
  • Krzysztof J. Kurzydlowski Faculty of Materials Science and Engineering Warsaw University of Technology


The present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flowrate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. Theaim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since thereare many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactorgeometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have beenconsidered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside thereactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numericalsimulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during thegrowth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of thesubstrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and itsgrowth rate.


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How to Cite
SKIBINSKI, Jakub et al. Numerical simulations of epitaxial growth in MOVPE reactor as a tool for aluminum nitride growth optimization. Journal of Power Technologies, [S.l.], v. 96, n. 2, p. 110--114, july 2016. ISSN 2083-4195. Available at: <>. Date accessed: 14 july 2024.
Materials Science


metalorganic vapor phase epitaxy, Finite Volume Method, semiconductors, aluminum nitride

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