Numerical simulations of epitaxial growth in MOVPE reactor as a tool for aluminum nitride growth optimization

Jakub Skibinski, Piotr Caban, Tomasz Wejrzanowski, Mateusz Grybczuk, Krzysztof J. Kurzydlowski

Abstract


The present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flow
rate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. The
aim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since there
are many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactor
geometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have been
considered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside the
reactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numerical
simulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during the
growth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of the
substrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and its
growth rate.

Keywords


metalorganic vapor phase epitaxy, Finite Volume Method, semiconductors, aluminum nitride

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