Numerical simulations of epitaxial growth in MOVPE reactor as a tool for aluminum nitride growth optimization

Jakub Skibinski, Piotr Caban, Tomasz Wejrzanowski, Mateusz Grybczuk, Krzysztof J. Kurzydlowski


The present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flow
rate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. The
aim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since there
are many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactor
geometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have been
considered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside the
reactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numerical
simulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during the
growth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of the
substrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and its
growth rate.


metalorganic vapor phase epitaxy, Finite Volume Method, semiconductors, aluminum nitride

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N. G. Wright, A. B. Horsfall, K. Vassilevski, Prospects for SiC

electronics and sensors, Materials Today 11 (2008) 16 – 21, doi:


P. Caban, W. Strupinski, J. Szmidt, M. Wojcik, J. Gaca, O. Kelekci,

D. Caliskan, E. Ozbay, Effect of growth pressure on coalescence

thickness and crystal quality of GaN deposited on 4HSiC,

Journal of Crystal Growth 315 (1) (2011) 168 – 173, doi:


W. Strupinski, K. Grodecki, A. Wysmolek, R. Stepniewski, T. Szkopek,

P. E. Gaskell, A. GrA˘ L’neis, D. Haberer, R. Bozek, J. Krupka, J. M.

Baranowski, Graphene Epitaxy by Chemical Vapor Deposition on SiC,

Nano Letters 11 (4) (2011) 1786–1791, doi:10.1021/nl200390e.

S. Karpov, Advances in the modeling of MOVPE processes, Journal of

Crystal Growth 248 (2003) 1 – 7, doi:10.1016/S0022-0248(02)01838-

J. Skibinski, P. Caban, A. K. Lewandowska, T. Wejrzanowski, K. J.

Kurzydlowski, Numerical simulations of heat and mass transfer in the

MOVPE process for obtaining high-quality nitride-based semiconductors,

WIT Transactions on Modelling and Simulation 59 (2015) 433–

, doi:10.2495/CMEM150391.

T. Wejrzanowski, J. Skibinski, A. K. Lewandowska, K. J. Kurzydlowski,

Modeling Of Heat And Mass Transfer In An SiC CVD Reactor As A Tool

To Design Modern Materials For High Power Electronics Applications,

WIT Transactions on Engineering Sciences 91 (2015) 213–220, doi:


S. A. Safvi, J. M. Redwing, M. A. Tischler, T. F. Kuech, GaN Growth by

Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and

Experimental Measurements, Journal of The Electrochemical Society

(5) (1997) 1789–1796, doi:10.1149/1.1837681.

E. Yakovlev, R. Talalaev, Y. Makarov, B. Yavich, W. Wang, Deposition

behavior of GaN in AIX 200/4 RF-S horizontal reactor, Journal of Crystal

Growth 261 (2004) 182 – 189, doi:10.1016/j.jcrysgro.2003.11.010.

J. Skibinski, T. Wejrzanowski, D. Teklinska, K. J. Kurzydlowski, Influence

of hydrogen volumetric flow rate on temperature distribution in

CVD reactor based on epi-growth of SiC, Journal of Power Technologies

(2) (2015) 119–125.

R. Pawlowski, C. Theodoropoulos, A. Salinger, T. Mountziaris, H. Moffat,

J. Shadid, E. Thrush, Fundamental models of the metalorganic

vapor-phase epitaxy of gallium nitride and their use in reactor design,

Journal of Crystal Growth 221 (2000) 622 – 628, doi:10.1016/S0022-


M. Dauelsberg, H. Hardtdegen, L. Kadinski, A. Kaluza, P. Kaufmann,

Modeling and experimental verification of deposition behavior during

AlGaAs growth: a comparison for the carrier gases N2 and H2,

Journal of Crystal Growth 223 (2001) 21 – 28, doi:10.1016/S0022-


H. Hardtdegen, A. Kaluza, D. Gauer, M. Ahe, M. Grimm, P. Kaufmann,

L. Kadinski, On the influence of gas inlet configuration with

respect to homogeneity in a horizontal single wafer MOVPE reactor,

Journal of Crystal Growth 223 (2001) 15 – 20, doi:10.1016/S0022-


C. S. Kim, J. Hong, J. Shim, B. J. Kim, H.-H. Kim, S. D. Yoo, W. S. Lee,

Numerical and Experimental Study on Metal Organic Vapor-Phase

Epitaxy of InGaN/GaN Multi-Quantum-Wells, Journal of Fluids Engineering

(8) (2008) 081601–081601, doi:10.1115/1.2956513.

M.Dauelsberg, L.Kandinski, Yu.N.Makarov, E.Woelk, G.Strauch,

D.Schmitz, H.Juergensen, GaN-MOVPE: correlation between computer

modelling and experimental data, Institute of Physics Conference

Series 142 (887).

J. Skibinski, P. Caban, T. Wejrzanowski, K. J. Kurzydlowski, Numerical

simulations of epitaxial growth process in MOVPE reactor as

a tool for design of modern semiconductors for high power electronics,

AIP Conference Proceedings 1618 (1) (2014) 859–862, doi:


M. Dutka, M. Ditaranto, T. Løvås, Emission characteristics of a novel

low NOx burner fueled by hydrogen-rich mixtures with methane, Journal

of Power Technologies 95 (2) (2015) 105.


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