Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC

Jakub Skibinski, Tomasz Wejrzanowski, Dominika Teklinska, Krzysztof J Kurzydlowski


In the present paper the quantitative relationship between the heat and mass transfer in the Aixtron VP508 hot wall
CVD reactor and the epitaxial growth of silicon carbide is determined. The aim of this study was to estimate optimal
process conditions for obtaining monocrystalline silicon carbide epi-layers with the most homogenous thickness. Since
there are many parameters influencing reactions on the crystal area, such as temperature, pressure, gas flow and reactor
geometry, it is dicult to design an optimal process. Detailed 3D modeling was used to gain insight into the process
conditions, as it is problematic to experimentally determine the exact distribution of heat and mass transfer inside the
reactor during epitaxial growth. Numerical simulations allow one to understand the process by calculating the heat and
mass transfer distribution during the epitaxial growth of silicon carbide. The present approach was applied to enhance
the performance of the Aixtron VP508 reactor.


Finite Volume Method, epitaxial growth, chemical vapor deposition, silicon carbide, semiconductors

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