Correlation with annealing temperature of pure and doped ZnO thin film

Foued Chabane, Noureddine Moummi, Said Benramache, Okba Belahssen, Djamel Bensahal

Abstract


Transparent conducting pure and doped zinc oxide thin films with cobalt and indium were deposited on glass substrate by ultrasonic spray method. The thin films were deposited at 350 °C and annealed 500 °C. The direct correlation between the difference of the crystallite size (ΔG) and the difference of the Urbach energy (ΔEu) suggests that the crystallites sizes of the films are predominantly influenced by the disorder of the thin films. The crystallites size in the thin films depend by the disorder (less defects), where the minimum disorder confirmed the high crystallinity. The correlation of the conductivity before and after annealing temperature also indicates that the measurement in the electrical conductivity of the films by the optical band gap was equal; it is predominantly influenced by the transition tail width of undoped and doped ZnO thin films. It will be shown that the conductivity of undoped and doped ZnO is directly correlated with the band gap of the host material. The model proposed of pure and doped ZnO thin film with annealing temperature was investigated.


Keywords


ZnO, Semiconductor doping, Thin films, Correlation.

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References


Coleman VA., Jagadish C.: Zinc oxide bulk thin films and nanostructures processing properties and applications gainesville. FL, USA, 2006, p. 1-20.

Ohtsu M.: Progress in nano-electro optics VII. Tokyo, 2002, p.73-108.

Ma L., Ai X., Huang X., Ma S.: Effects of the substrate and oxygen partial pressure on the microstructures and optical properties of Ti-doped ZnO thin films. Superlattices and Microstructures 50, 2011, s.703–712.

Benramache S., Benhaoua B., et al.: Effect of the Dip-coating Speed on the Structural and Optical Properties of ZnO Thin Films IJSEI 1, 2012, s. 28-31.

Ko YD., Kim KC., Kim YS.: Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes. Superlattices and Microstructures 51, 2012, s. 933–941.

tudose IV., Horvath P., suchea M., christoulakis S., kitsopoulos T., kiriakidis G.: Correlation of ZnO thin film surface properties with conductivity. Appl. Phys. A 89, 2007, s. 57–61.

Benramache S., Benhaoua B.: Influence of substrate temperature and Cobalt concentration on structural and optical properties of ZnO thin films prepared by Ultrasonic spray technique. Superlattices and Microstructures 52, 2012, s. 807–815.

Benramache S., Benhaoua B., Chabane F., Guettaf A.: A comparative study on the nanocrystalline ZnO thin films prepared by ultrasonic spray and sol–gel method. Optik 2012, http://dx.doi.org/10.1016/j.ijleo.2012.10.001.

Benramache S., Benhaoua B., Chabane F., Lemadi FZ.: Influence of Growth Time on Crystalline Structure. Conductivity and Optical Properties of ZnO Thin Films. Journal of Semiconductors 34, 2013, s. 023001-1.

Benramache S., Benhaoua B.: Influence of annealing temperature on structural and optical properties of ZnO: In thin films prepared by ultrasonic spray technique. Superlattices and Microstructures 52, 2012, s. 1062–1070.

Ton-That C., Foley M., Phillips MR., Tsuzuki T., Smith Z.: Correlation between the structural and optical properties of Mn-doped ZnO nanoparticles. Journal of Alloys and Compounds 522, 2012, s. 114– 117.

Mal S., Nori S., Jin C., Narayan J., Nellutla S., Smirnov AI., Prater JT.: Reversible room temperature ferromagnetism in undoped zinc oxide: Correlation between defects and physical properties.Jurnal of Applied Physics 108, 2010, s. 073510 –10.

Lalanne M., Soon JM., Barnabé A., Presmanes L., Pasquet I., Tailhades Ph.: Preparation and characterization of the defect–conductivity relationship of Ga-doped ZnO thin films deposited by nonreactive radio-frequency–magnetron sputtering. Journal of Materials Research 25, 2010, s. 2407 –2414.

Kappertza O., Drese R.: Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films. J. Vac. Sci. Technol. A 20, 2012, s. 2084 – 2095.


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